Achieves 800mW output with a pump laser for C-band Raman amplifiers
– Beginning of sample deliveries of the FRL1441 series pump laser with 700 mW optical output –
*Achieves 800mW output with low power consumption of around 16W with pump laser for C-band Raman amplifiers
*Started sample shipments of a pump laser for Raman amplifiers that applies this technology to achieve a peak optical output of 700mW
*By increasing the efficiency of the pump laser, a key device for Raman amplifiers, contributes to the development of high-capacity communication networks with a transmission speed exceeding 800 Gbps and even reaching 1.6 Tbps
Aiming to increase the capacity of medium and long distance optical communication networks, which is essential for the practical implementation of 5G, the technological development is progressing towards an increase in the transmission speed from the current 100-400 Gbs to 800 Gbs. Gbps and even 1.6 Tbps in the future. These faster transmission speeds require high performance Raman amplifiers to supplement OSNR (optical signal to noise ratio, note 1) degradation on the receive side of the signal.
Using InP (Indium Phosphide, note 3) semiconductor chip technology and optical module assembly technology accumulated over the years, we have achieved 800mW peak output with pump laser for amplifiers Raman (Fig. 2). In this new development, we have increased the efficiency by optimizing the cavity length of the semiconductor laser chip and the structure of the active layer and also achieved high optical coupling efficiency to the optical fiber, which is an important technology in laser pump assembly. Using this technology, we have developed the FRL1441 series pump laser for Raman amplifiers which has a peak optical output of 700mW and started sample shipments of this pump laser in August this year.
This new development is expected to improve OSNR in long distance transmission following further increases in baud rate and data volume, as well as lead to smaller Raman amplifiers and higher pump laser power consumption. low (by 37% compared to existing systems).
Current development results will be announced on
As a leading laser company,
Main Features Model Series FRL1441 Optical Output (mW) 800 700 600 500 Power Consumption (W) Typ.16 Max.14 Max.10 Max.6 Drive Conditions Ts=35°C?Tc=70°C(EOL) Band bandwidth C- band
(note 1)OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal to noise ratio
(note 2)Appl. Phys. Lett. 54, 295 (1989), 295 Efficient Er3+-optical fiber amplifier pumped by a 1.48 um InGaAsP laser diode, IEICE PIONEERS WEBINAR series no.1, EDFA “A Long Adventuresome Trip” by
(note 3)InP (Indium Phosphide): a III-V compound semiconductor used in the manufacture of laser diode chips and high-speed transistors
Based on “